Transistor with Buried Source

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Intellectual Property

ID:		UML 01-10
IP Type:		Licensable Technology
Title:		Transistor with Buried Source
Inventor:		Samson Mil'shtein
Summary:		In this invention, the source of the FET is positioned at the beginning but the bottom of the channel (vs. top of the channel). This configuration re-directs the flow of electrons along the channel. In turn, the tailoring of the electrical field and the impact of the field on electron behavior is much easier to control. A transistor device includes a gate region disposed adjacent to a semiconductor substrate such that a low impedance channel is formed between the source region and drain region of a transistor device when the voltage is applied to the gate. The drain region of the device can be disposed aside the gate region on a common surface of the semiconductor substrate. The source region of the device also can be disposed adjacent to the substrate but on the side of the semiconductor substrate opposing the drain and/or gate regions. Based on this topology, a transistor device can be fabricated with a buried source to enhance its operating characteristics such as switching speed.
Tech Type:		Semiconductor
URL:		http://www.uml.edu/cvip
Contact:		Susu Wong, 978 934 4722, susu_wong@uml.edu
Organization:		University of Massachusetts Lowell

Display all intellectual properties for Samson Mil'shtein
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