RF Switch Using Pair of pHEMTs with Shifted Gates

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Intellectual Property

ID:		UML 05-02
IP Type:		Licensable Technology
Title:		RF Switch Using Pair of pHEMTs with Shifted Gates
Inventor:		Samson Mil'shtein
Summary:		Linearity (transconductance) is affected by the electric field in the transistor. By employing multiple gates at different biases, the field can be tailored to remain constant, thereby giving constant transconductance. The transistor comprises two gates stacked on top off each other, and separated by a Silicon-Nitrogen insulator. The top gate is longer than the bottom gate and extends closer to the drain than the bottom gate. The biases of the gates are independent of each other and tuned to produce a more uniform electrical field along the channel. The design is flexible in that the vertical distance between the tail of the top gate and the channel, as well as the horizontal distance between the end of the top gate and the drain can be varied, which allows for minimization of the total gate capacitance. In addition to linearity, the design approach provides for fast pHEMT switches, with steeper rise. The portfolio of related technologies includes US patents No. 6,833,571, “Transistor device including buried source” issued on December 21, 2004 which describes tailored fields in non-heterostructured transistors for higher power, linearity and reduced gate-source capacitance for, e.g., amplifiers, and No. 6,037,830 “Tailored field in multigate FETS” which describes tailored fields for GHz switches, mixers and amplifiers, without limit on incoming signal amplitude, issued March 14, 2000.”
Tech Type:		Semiconductor
URL:		http://www.uml.edu/cvip
Contact:		Susu Wong, 978 934 4722, susu_wong@uml.edu
Organization:		University of Massachusetts Lowell

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