Multi-Gate HFET with Tailored Field

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Intellectual Property

ID:		UML 03-01
IP Type:		Licensable Technology
Title:		Multi-Gate HFET with Tailored Field
Inventor:		Samson Mil'shtein
Summary:		A heterostructured field effect transistor has a multi-gate configuration, in which the gate voltages are individually biased to tailor the potential field. The multi-gate configuration can be a two-, three-, or four-gate configuration. The transconductance of the transistor can be substantially linear over a range of gate voltages.
Tech Type:		Semiconductor
URL:		http://www.uml.edu/cvip
Contact:		Susu Wong, 978 934 4722, susu_wong@uml.edu
Organization:		University of Massachusetts Lowell

Display all intellectual properties for Samson Mil'shtein
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